2inch Silicon Carbide wafer Diameter 50.8mm P grade R grade D drade
Double Side Polished
Product Description:
The Silicon Carbide Wafer is a high-performance material that is
used in the production of electronic devices. It is made from a
Silicon Carbide Layer on top of a Silicon wafer and is available in
different grades, types, and surface finishes. The wafer has a
flatness of Lambda/10, which ensures that the electronic devices
made from the wafer are of the highest quality and performance. The
Silicon Carbide Wafer is an ideal material for use in power
electronics, LED technology, and advanced sensors. We provide
high-quality SiC wafer( Silicon Carbide ) to the electronic and
optoelectronic industry.
Character:
SIC (Silicon Carbide) wafer is a type of semiconductor wafer based
on silicon carbide material. Compared to conventional silicon (Si)
wafers, SIC wafers have the following characteristics:
1. Higher Thermal Conductivity: SIC wafer has a much higher thermal conductivity than silicon,
meaning SIC wafers can effectively dissipate heat and are suitable
for operation in high-temperature environments.
2. Higher Electron Mobility: SIC wafer has higher electron mobility than silicon, allowing SIC
devices to operate at higher speeds.
3. Higher Breakdown Voltage: SIC wafer material has a higher breakdown voltage, making it
suitable for manufacturing high-voltage semiconductor devices.
4. Higher Chemical Stability: SIC wafer exhibits greater resistance to chemical corrosion,
contributing to improved reliability and durability of devices.
5. Wider Bandgap: SIC wafer has a wider bandgap than silicon, enabling SIC devices
to perform better and more stably at high temperatures.
6. Better Radiation Resistance: SIC wafers have stronger resistance to radiation, making them
suitable for use in radiation environments
such as spacecraft and nuclear facilities.
7. Higher Hardness: SIC wafer is harder than silicon, enhancing the durability of
wafers during processing.
8. Lower Dielectric Constant: SIC wafer has a lower dielectric constant than silicon, helping to
reduce parasitic capacitance in devices and improve high-frequency
performance.
9. Higher Saturation Electron Drift Velocity: SIC wafer has a higher saturation electron drift velocity than
silicon, giving SIC devices an advantage in high-frequency
applications.
10.Higher Power Density: With the aforementioned features, SIC wafer devices can achieve
higher power output in smaller sizes.
| Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 50.8 mm±0.38 mm |
| Thickness | 330 μm±25μm |
| Wafer Orientation | On axis : <0001>±0.5°
for 6H-N/4H-N/4H-SI/6H-SI | Off axis:4.0° toward 1120±0.5° for 4H-N/4H-SI |
| Micropipe Drientation(cm-2) | ≤5 | ≤15 | ≤50 |
| Resistivity(Ω·cm) | 4H-N | 0.015~0.028 Ω·cm |
| 6H-N | 0.02~0.1 |
| 4/6H-SI | >1E5 | (90%) >1E5 |
| Primary Flat Orientation | {10-10}±5.0° |
| Primary Flat Length (mm) | 15.9 ±1.7 |
| Secondary Flat Length(mm) | 8.0 ±1.7 |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Edge Exclusion | 1 mm |
| TTV/Bow /Warp (um) | ≤15 /≤25 /≤25 |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | None | 1 allowed, ≤1 mm |
| Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤1 % | Cumulative area≤3 % |
Applications:
1. Power Electronics: SiC wafers are widely used in power
electronic devices such as power converters, inverters, and
high-voltage switches due to their high breakdown voltage and low
power loss characteristics.
Electric Vehicles: SiC wafers are utilized in electric vehicle
power electronics to improve efficiency and reduce weight, enabling
faster charging and longer driving ranges.
2. Renewable Energy: SiC wafers play a crucial role in renewable
energy applications like solar inverters and wind power systems,
enhancing energy conversion efficiency and reliability.
3. Aerospace and Defense: SiC wafers are essential in aerospace and
defense industries for high-temperature, high-power, and
radiation-resistant applications, including aircraft power systems
and radar systems.
4. Industrial Motor Drives: SiC wafers are employed in industrial
motor drives to enhance energy efficiency, reduce heat dissipation,
and increase the lifespan of equipment.
5. Wireless Communication: SiC wafers are used in RF power
amplifiers and high-frequency applications in wireless
communication systems, offering higher power density and improved
performance.
6. High-Temperature Electronics: SiC wafers are suitable for
high-temperature electronics applications where conventional
silicon devices may not operate reliably, such as in downhole
drilling and automotive engine control systems.
7. Medical Devices: SiC wafers find applications in medical devices
like MRI machines and X-ray equipment due to their durability, high
thermal conductivity, and radiation resistance.
8. Research and Development: SiC wafers are utilized in research
laboratories and academic institutions for developing advanced
semiconductor devices and exploring new technologies in the field
of electronics.
9. Other Applications: SiC wafers are also employed in areas such
as harsh environment sensors, high-power lasers, and quantum
computing due to their unique properties and performance
advantages.
Customization:
We offer customization services for Particle, Material, Grade,
Orientation, and Diameter. You can choose between a free or low
particle Silicon Carbide layer. Our Silicon Carbide Wafer comes
with on-axis or off-axis orientation depending on your requirement.
You can also choose the diameter of Silicon Carbide Wafer that you
require.
The Silicon Carbide Wafer is available in different grades,
including Production, Research, and Dummy. The Production-grade
wafer is used in the production of electronic devices and is of the
highest quality. The Research-grade wafer is used for research
purposes, while the Dummy-grade wafer is used for testing and
calibration purposes. The Silicon Carbide Wafer is also available
in different types, including 4H, which is the most common type
used in electronic devices.
FAQ:
Q: How to make a SiC wafer?
A: The process involves converting raw materials such as silica
sand into pure silicon. The growth of silicon crystals using the
Czochralski process, the slicing of the crystals into thin, flat
discs, and the cleaning and preparation of the wafers for use in
semiconductors devices.
Q: What is the process of making SiC?
A:Silicon carbide manufacturing process - GAB Neumann. Silicon
carbide (SiC) is a compound of silicon and carbon with a chemical
formula of SiC. The simplest manufacturing process for producing
silicon carbide is to combine silica sand and carbon in an Acheson
graphite electric resistance furnace at a high temperature, between
1600°C (2910°F) and 2500°C (4530°F).
Q: What are the uses of silicon carbide wafer?
A: In electronics, SiC materials are used with light-emitting
diodes (LEDs) and detectors. In the semiconductor industry, a
market where interest is red-hot, SiC wafers are used in electronic
devices that operate at high temperatures, high voltages, or both.
Product Recommend:
1. 8inch SiC Wafer
2. 2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type
Production Grade
