InP DFB Epiwafer wavelength 1390nm InP substrate 2 4 6 inch for 2.5~25G DFB laser diode

InP DFB Epiwafer InP substrate's brief

InP DFB Epiwafers designed for 1390nm wavelength applications are critical components used in high-speed optical communication systems, particularly for 2.5 Gbps to 25 Gbps DFB (Distributed Feedback) laser diodes. These wafers are grown on Indium Phosphide (InP) substrates using advanced MOCVD (Metal-Organic Chemical Vapor Deposition) techniques to achieve high-quality epitaxial layers.

The active region of the DFB laser is typically fabricated using InGaAlAs or InGaAsP quaternary multiple quantum wells (MQWs), which are designed to be strain-compensated. This ensures optimal performance and stability for high-speed data transmission. The wafers are available in various substrate sizes, including 2-inch, 4-inch, and 6-inch, to meet diverse manufacturing needs.

The 1390nm wavelength is ideal for optical communication systems requiring precise single-mode output with low dispersion and loss, making it particularly suitable for medium-range communication networks and sensing applications. Customers can either handle the formation of the grating themselves or request epihouse services, including re-growth for further customization.

These epiwafers are specifically engineered to meet the demands of modern telecommunication and data communication systems, providing efficient, high-performance solutions for optical transceivers and laser modules in high-speed networks.

InP DFB Epiwafer InP substrate's structure

InP DFB Epiwafer InP substrate's PL mapping test result

InP DFB Epiwafer InP substrate's XRD & ECV test result

InP DFB Epiwafer InP substrate's real photos

InP DFB Epiwafer InP substrate's properties

Properties of InP DFB Epiwafer on InP Substrate

Substrate Material: Indium Phosphide (InP)

• Lattice Matching: InP provides excellent lattice matching with epitaxial layers such as InGaAsP or InGaAlAs, ensuring high-quality epitaxial growth with minimal strain and defects, which is crucial for the performance of DFB lasers.
• Direct Bandgap: InP has a direct bandgap of 1.344 eV, making it ideal for emitting light in the infrared spectrum, particularly at wavelengths such as 1.3 μm and 1.55 μm, commonly used in optical communication.

Epitaxial Layers

• Active Region: The active region typically consists of InGaAsP or InGaAlAs quaternary multiple quantum wells (MQWs). These MQWs are strain-compensated to enhance performance, ensuring efficient electron-hole recombination and high optical gain.
• Cladding Layers: These layers provide optical confinement, ensuring that light remains within the active region, enhancing the laser's efficiency.
• Grating Layer: The integrated grating structure provides feedback for single-mode operation, ensuring stable and narrow-linewidth emission. The grating can be either fabricated by the customer or offered by the epiwafer supplier.

Operating Wavelength:

• 1390nm: The DFB laser is optimized for operation at 1390nm, which is suitable for applications in optical communication, including metro and long-haul networks.

High-Speed Modulation Capability:

• The epiwafer is designed for use in DFB lasers that support data transmission speeds from 2.5 Gbps to 25 Gbps, making it ideal for high-speed optical communication systems.

Temperature Stability:

• InP-based DFB epiwafers provide excellent temperature stability, ensuring consistent wavelength emission and reliable performance in varying operational environments.

Single-Mode and Narrow Linewidth:

• DFB lasers offer single-mode operation with narrow spectral linewidth, reducing signal interference and improving data transmission integrity, which is essential for high-speed communication networks.

The InP DFB Epiwafer on an InP substrate provides excellent lattice matching, high-speed modulation capability, temperature stability, and precise single-mode operation, making it a key component in optical communication systems operating at 1390nm for data rates from 2.5 Gbps to 25 Gbps.

Data sheet

more data is in our PDF document,please click it ZMSH DFB inp epiwafer.pdf