| Item | Specification |
|---|
| Material | CVD SiC |
| Max Diameter | Max 330 mm |
| Resistivity | Low Res. <0.02 Ω·cm; Middle Res. 0.2–25 Ω·cm; High Res. >100
Ω·cm |
| RRG | <5% |
| Surface Condition | Ground |
| Machining Precision | <10 μm |
| Quality Inspection | Free of chips, scratches, cracks, stains and other defects |
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Material Properties of CVD Polycrystalline SiC
CVD polycrystalline SiC is produced by chemical vapor deposition.
It features a dense structure, high purity, excellent corrosion
resistance, and strong stability in semiconductor clean process
environments.
| Property | Unit | Typical Value |
|---|
| Density | g/cm³ | 3.21–3.22 |
| Flexural Strength | MPa | 320–380 |
| Thermal Conductivity | W/m·K | 240–360 |
| Grain Size | μm | 5–10 |
| Purity | % | 99.99997 |
| Vickers Microhardness | HV | 3100–3700 |
| Elastic Modulus | GPa | 450–530 |
| XRD Rate | - | 0.65–1.1 |
| CTE, RT to 1000°C | 10⁻⁶/K | 4.8–5.1 |
Product Advantages
High Purity
The purity of CVD SiC can reach 99.99997%, helping reduce the risk of metal contamination in semiconductor
front-end processes.
Excellent Plasma Corrosion Resistance
CVD SiC maintains good stability in fluorine-based and
chlorine-based plasma environments, reducing component wear and
particle generation.
High Thermal Conductivity
With thermal conductivity of 240–360 W/m·K, CVD SiC helps improve thermal field uniformity and process
consistency.
High-Temperature Stability
CVD SiC components are suitable for EPI, Diffusion, RTP, and other
high-temperature processes. They maintain good dimensional
stability during long-term use.
High Hardness and Wear Resistance
High Vickers hardness provides excellent wear resistance and helps
extend component service life.
Custom Machining Available
Products can be customized according to customer drawings,
including outer diameter, inner diameter, holes, grooves, steps,
chamfers, surface condition, and assembly precision.
Application Fields
CVD polycrystalline SiC components are widely used in:
- Dry etching equipment
- Epitaxy equipment
- Diffusion furnace equipment
- RTP equipment
- Semiconductor equipment OEM parts
- Wafer fab spare part replacement
- Si, SiC, GaN, GaAs wafer processes
Q&A
Q1: What are CVD polycrystalline SiC components used for?
CVD polycrystalline SiC components are mainly used in semiconductor
front-end equipment, including Dry Etch, EPI, Diffusion, and RTP systems. Typical products include SiC rings, SiC electrodes, edge rings, susceptors, SiC boats, and
dummy wafers.
Q2: What are the advantages of CVD SiC compared with quartz or
silicon parts?
CVD SiC offers better plasma corrosion resistance, high-temperature stability, thermal
conductivity, hardness, and service life. It can reduce particle generation and component wear in harsh
semiconductor process environments.
Q3: What materials are available for these components?
We can provide components made from CVD SiC, single crystal silicon, multi-crystal silicon, and quartz, depending on the application and equipment requirements.
