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4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

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4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

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Brand Name :	ZMKJ
Model Number :	4inch P-grade
Price :	600-1500usd/pcs by FOB
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50pcs/month
Delivery Time :	1-6weeks

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4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs

4 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade		Zero MPD Production Grade (Z Grade)	Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter		99.5-100 mm
Thickness	4H-N	350 μm±25μm
	4H-SI	500 μm±25μm
Wafer Orientation		Off axis : 4.0°toward< 1120 > ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI
Micropipe Density	4H-N	≤0.5cm-2	≤2 cm-2	≤15 cm-2
	4H-SI	≤1cm-2	≤5 cm-2	≤15 cm-2
Resistivity	4H-N	0.015~0.025 Ω·cm		0.015~0.028 Ω·cm
	4H-SI	≥1E7 Ω·cm		≥1E5 Ω·cm
Primary Flat		{10-10}±5.0°
Primary Flat Length		32.5 mm±2.0 mm
Secondary Flat Length		18.0mm±2.0 mm
Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion		2 mm
LTV/TTV/Bow /Warp		≤4μm/≤10μm /≤25μm /≤35μm		≤10μm/≤15μm /≤25μm /≤40μm
Roughness		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
Cracks by high intensity light		None		Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light		Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Areas by high intensity light		None		Cumulative area ≤3%
Visual Carbon Inclusions		Cumulative area ≤0.05%		Cumulative area ≤3%
Scratches by high intensity light		None		Cumulative length≤1×wafer diameter
Edge chip		None		5 allowed, ≤1 mm each
Contamination by high intensity light		None
Packaging		Multi-wafer Cassette Or Single Wafer Container

Notes:
* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

About SiC Substrates Applications

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

Sales & Customer Service

Materials Purchasing

The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.

Quality

During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

Service

We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.

we are at your side by any time when you have problem,and resolve it in 10hours.

Key words: sic wafer ,silicon carbide wafer , prime grade dummy grade

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