Sign In | Join Free | My burrillandco.com
Home > Gallium Nitride Wafer >

5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial

SHANGHAI FAMOUS TRADE CO.,LTD
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now
    Buy cheap 5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial from wholesalers
     
    Buy cheap 5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial from wholesalers
    • Buy cheap 5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial from wholesalers
    • Buy cheap 5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial from wholesalers
    • Buy cheap 5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial from wholesalers

    5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial

    Ask Lasest Price
    Brand Name : zmkj
    Model Number : GaN-FS-C-U-C50-SSP
    Price : 1200~2500usd/pc
    Payment Terms : T/T
    Supply Ability : 50pcs per month
    Delivery Time : 1-5weeks
    • Product Details
    • Company Profile

    5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial

    2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)


    GaN Wafer Characteristic

    ProductGallium nitride (GaN) substrates
    Product Description:

    Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process,

    the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.

    Technical parameters:
    Size2 "round; 50mm ± 2mm
    Product PositioningC-axis <0001> ± 1.0.
    Conductivity typeN-type & P-type
    ResistivityR <0.5Ohm-cm
    Surface treatment (Ga face)AS Grown
    RMS<1nm
    Available surface area> 90%
    Specifications:

    GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

    GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

    GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

    GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

    AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

    Note: according to customer demand special plug orientation and size.

    Standard Packaging:1000 clean room, 100 clean bag or single box packaging


    Application

    GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
    Laser Projection Display, Power Device, etc.

    • Laser Projection Display, Power Device, etc.
    • Date storage
    • Energy-efficient lighting
    • Full color fla display
    • Laser Projecttions
    • High- Efficiency Electronic devices
    • High- Frequency Microwave Devices
    • High-energy Detection and imagine
    • New energy solor hydrogen technology
    • Environment Detection and biological medicine
    • Light source terahertz band


    Specifications:

    Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
    ItemGaN-FS-aGaN-FS-m
    Dimensions5.0mm×5.5mm
    5.0mm×10.0mm
    5.0mm×20.0mm
    Customized Size
    Thickness350 ± 25 µm
    Orientationa-plane ± 1°m-plane ± 1°
    TTV≤15 µm
    BOW≤20 µm
    Conduction TypeN-type
    Resistivity(300K)< 0.5 Ω·cm
    Dislocation DensityLess than 5x106 cm-2
    Useable Surface Area> 90%
    PolishingFront Surface: Ra < 0.2nm. Epi-ready polished
    Back Surface: Fine ground
    PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.



    Q&A


    Q:What is a GaN wafer?

    A:A GaN wafer (gallium nitride wafer) is a thin, flat substrate made from gallium nitride, a wide-bandgap semiconductor material that is widely used in high-performance electronics. GaN wafers are the foundation for manufacturing electronic devices, particularly for applications requiring high power, high frequency, and high efficiency. This material is especially important in industries such as power electronics, telecommunications, and LED lighting.


    Q:Why is GaN better than silicon?

    A:GaN (gallium nitride) is better than silicon in many high-performance applications due to its wide bandgap (3.4 eV compared to silicon's 1.1 eV), enabling GaN devices to operate at higher voltages, temperatures, and frequencies. GaN's high efficiency leads to lower heat generation and reduced energy loss, making it ideal for power electronics, fast-charging systems, and high-frequency applications. Additionally, GaN has better thermal conductivity, allowing devices to run more efficiently in demanding conditions. As a result, GaN-based devices are more compact, energy-efficient, and reliable than their silicon counterparts.






    Key words:#GaN #GalliumNitride #PowerElectronics #HighPerformance #Efficiency #LED #LaserProjection #EnergyEfficientLighting #HighFrequencyDevices #NonPolarGaN #FreestandingGaN #GaNSubstrates #MOCVD

    Product Tags:

    gan wafer

      

    gallium phosphide wafers

      
    Quality 5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: SHANGHAI FAMOUS TRADE CO.,LTD
    *Subject:
    *Message:
    Characters Remaining: (0/3000)