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Square SiC Windows Silicon Carbide Substrate 1x1x0.5mmt SiC Lens

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Square SiC Windows Silicon Carbide Substrate 1x1x0.5mmt SiC Lens

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Brand Name :	ZMKJ
Model Number :	1x1x0.5mmt
Certification :	ROHS
Price :	by case
Payment Terms :	T/T, Western Union, MoneyGram
Supply Ability :	1-50000000pcs/month
Delivery Time :	3 weeks

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Square SiC Windows Silicon Carbide Substrate 1x1x0.5mmt SiC Lens

Silicon carbide wafer optical 1/2/3 inch SIC wafer for sale Sic Plate Silicon Wafer Flat Orientation Enterprises for Sale 4inch 6inch seed sic wafer 1.0mm Thickness 4h-N SIC Silicon Carbide Wafer For seed growth 6H-N/6H-Semi 4H HPSI 5*10mmt 10x10mmt 5*5mm polished Silicon Carbide sic substrate chips Wafer

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon and carbon with the chemical formula SiC. SiC is used in semiconductor electronics devices operating at high temperatures, high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade

Diameter		50.8 mm±0.2mm

Thickness		330 μm±25μm or 430±25um

Wafer Orientation		Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI

Micropipe Density		≤0 cm-2	≤5 cm-2	≤15 cm-2	≤100 cm-2

Resistivity	4H-N	0.015~0.028 Ω•cm

	6H-N	0.02~0.1 Ω•cm

	4/6H-SI	≥1E5 Ω·cm

Primary Flat		{10-10}±5.0°

Primary Flat Length		18.5 mm±2.0 mm

Secondary Flat Length		10.0mm±2.0 mm

Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°

Edge exclusion		1 mm

TTV/Bow /Warp		≤10μm /≤10μm /≤15μm

Roughness		Polish Ra≤1 nm

		CMP Ra≤0.5 nm

Cracks by high intensity light		None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm


Hex Plates by high intensity light		Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%

Polytype Areas by high intensity light		None		Cumulative area ≤2%	Cumulative area ≤5%


Scratches by high intensity light		3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length


edge chip		None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

SiC Applications

Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs-based devices. Below are some popular applications of SiC substrates.

Other products

8inch SiC wafer dummy grade 2inch SiC wafer

Packaging – Logistics
We are concerned with each detail of the package, cleaning, anti-static, and shock treatment.

According to the quantity and shape of the product, we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassettes in the 100-grade cleaning room.

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