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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth

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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth

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6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth

4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer About Silicon Carbide (SiC...

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silicon carbide substrate

sic wafer

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